Performance improvement of phase-change memory cell using AlSb3Te and atomic layer deposition TiO2 buffer layer
نویسندگان
چکیده
منابع مشابه
Performance improvement of phase-change memory cell using AlSb3Te and atomic layer deposition TiO2 buffer layer
A phase change memory (PCM) cell with atomic layer deposition titanium dioxide bottom heating layer is investigated. The crystalline titanium dioxide heating layer promotes the temperature rise in the AlSb3Te layer which causes the reduction in the reset voltage compared to a conventional phase change memory cell. The improvement in thermal efficiency of the PCM cell mainly originates from the ...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2013
ISSN: 1556-276X
DOI: 10.1186/1556-276x-8-77